Search results for "Effective input noise temperature"
showing 7 items of 7 documents
Noise parameters of HEMTs: analysis of their properties from a circuit model approach
1996
Noise parameters of high electron mobility transistors (HEMT) at microwave frequencies are a subject of active research since the knowledge of their performance is of key importance for the use of these devices for designing low‐noise amplifiers. Employs a simple noise model to derive the analytical expressions for the device noise parameters F0, Γ0 and N in terms of the electrical elements associated with the basic equivalent circuit of an HEMT. Analyses such expressions to establish some fundamental relationships, as well as the expected noise performance of the device when the parasitic elements representing package effects are included.
Langevin Approach to Understand the Noise of Microwave Transistors
2004
A Langevin approach to understand the noise of microwave devices is presented. The device is represented by its equivalent circuit with the internal noise sources included as stochastic processes. From the circuit network analysis, a stochastic integral equation for the output voltage is derived and from its power spectrum the noise figure as a function of the operating frequency is obtained. The theoretical results have been compared with experimental data obtained by the characterization of an HEMT transistor series (NE20283A, by NEC) from 6 to 18 GHz at a low noise bias point. The reported procedure exhibits good accuracy, within the typical uncertainty range of any experimental determin…
Cross-Spectrum PM Noise Measurement, Thermal Energy, and Metamaterial Filters.
2017
International audience; Virtually all commercial instruments for the measurement of the oscillator PM noise make use of the crossspectrum method (arXiv:1004.5539 [physics.ins-det], 2010). High sensitivity is achieved by correlation and averaging on two equal channels, which measure the same input, and reject the background of the instrument.We show that a systematic error is always present if the thermal energy of the input power splitter is not accounted for. Such error can result in noise underestimation up to a few decibels in the lowest-noise quartz oscillators, and in an invalid measurement in the case of cryogenic oscillators. As another alarming fact, the presence of metamaterial com…
ACCURATE MEASUREMENTS OF OPTIMUM NOISE PARAMETERS OF MICROWAVE TRANSISTORS
1986
A method for measuring losses of the tuner network used as noise source admittance transformer in transistor noise parameter test-set is presented. Since the method is based on noise figure measurements, tuner losses can be determined on-line while performing measurements for determining transistor noise parameters. As experimental verifications the optimum noise parameters of a GaAs FET in the 4 - 12 GHz frequency range, measured through a computer-assisted measuring system, are reported.
On the determination of device noise and gain parameters
1979
The least-squares fitting of measured noise figures and gains versus input termination admittance is an established procedure to determine linear two-port noise and gain parameters. Unfortunately, the method is liable to the serious inconvenience of yielding often erroneous results or even results without physical meaning. Some criteria are suggested which allow the carrying out of measurements in such a manner as to safely avoid the above drawbacks.
Three Different Methods for Determining the Microwave Noise Parameters of HEMT's at Decreasing Temperatures
1998
The noise characteristics of any transistor are usually represented by means of four parameters which are frequency-, bias- and temperature-dependent, similarly to the scattering parameters. The noise parameters are determined by a standard indirect procedure based on multiple noise figure measurements and appropriate data processing techniques requiring a complex instrumentation set-up and skilled operators. As an alterative way, we have shown that the noise parameters of packaged HEAMT's can be computed with very good accuracy from the analysis of a noisy circuit model derived from the scattering parameters plus a single noise figure measurement. A third way exists for the determination o…
Noise characterization of analog to digital converters for amplitude and phase noise measurements
2017
International audience; Improvements on electronic technology in recent years have allowed the application of digital techniques in phase noise metrology where low noise and high accuracy are required, yielding flexibility in systems implementation and setup. This results in measurement systems with extended capabilities, additional functionalities and ease of use. In most digital schemes the Analog to Digital Converters (ADCs) set the ultimate performance of the system, therefore the proper selection of this component is a critical issue. Currently, the information available in literature describes in depth the ADC features only at frequency offsets far from the carrier. However, the perfo…